Are Your Semiconductor Devices Protected With The Correct High-Speed Fuse

In today’s power electronics, protecting sensitive semiconductors isn’t just recommended—it’s essential. Whether in industrial drives, renewable energy inverters, or ESS and Semiconductor High Speed Fuse applications, the right protection ensures safety, reduces downtime, and saves cost. Without a fuse designed for ultra-rapid response, expensive components like IGBTs and MOSFETs can be destroyed in microseconds.

So, what should you look for in a high-performance fuse? Key parameters include:

• Voltage Rating: Must match or exceed the system’s maximum operating voltage.

• Current Rating: Based on continuous operational load, not just peak current.

• Breaking Capacity: Must be higher than the available fault current.

• I²t Value: Critical for semiconductor protection; must be lower than the device being protected.

Here’s how our Galaxy Fuse product series delivers superior performance:

ESS and Semiconductor High Speed Fuse – FAQ

What is the main role of a high-speed fuse in an ESS
High-speed fuses protect energy storage systems from overcurrent and short circuits by interrupting fault currents within milliseconds, preventing damage to batteries and power converters.

How do I select the correct current rating for a semiconductor fuse
The current rating should be based on the normal operating current of the circuit, adjusted for ambient temperature and airflow—not just the peak load.

Why is I²t an important parameter in fuse selection
I²t represents the energy let-through; a lower value means less thermal stress on semiconductors, ensuring longer device life and enhanced system reliability.

Trust Galaxy Fuse to deliver precision protection. Our products are engineered for reliability and are validated in top-tier ESS and Semiconductor High Speed Fuse applications worldwide.

Contact us today for a detailed consultation or to request product samples. Let Galaxy Fuse secure your systems.